IndiumV3, Russie, Analysis, bibRecord, 000234

Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

Identifieur interne : 000234 ( Russie/Analysis ); précédent : 000233; suivant : 000235

Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

Auteurs : RBID : Pascal:07-0365917

Descripteurs français

Pascal (Inist)
- Photoconductivité, Eclairement, Rayonnement IR, Effet Shubnikov de Haas, Effet température, Indium arséniure, Gallium arséniure, Point quantique, InAs, GaAs, 7363K.

English descriptors

KwdEn :
- Gallium arsenides, Illumination, Indium arsenides, Infrared radiation, Photoconductivity, Quantum dots, Shubnikov-de Haas effect, Temperature effects.

Abstract

Persistent lateral infra-red photoconductivity has been observed and investigated in InAs/GaAs layers with quantum dots (QD) in the temperature range 4.2

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Pascal:07-0365917

Le document en format XML

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<author><name sortKey="Kulbachinskii, V A" uniqKey="Kulbachinskii V">V. A. Kulbachinskii</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Low Temperature Physics Department, M. V. Lomonosov Moscow State University, GSP-2</s1>
<s2>119992 Moscow</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
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<author><name sortKey="Kytin, V G" uniqKey="Kytin V">V. G. Kytin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Low Temperature Physics Department, M. V. Lomonosov Moscow State University, GSP-2</s1>
<s2>119992 Moscow</s2>
<s3>RUS</s3>
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<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
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</author>
<author><name sortKey="Rogozin, V A" uniqKey="Rogozin V">V. A. Rogozin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Low Temperature Physics Department, M. V. Lomonosov Moscow State University, GSP-2</s1>
<s2>119992 Moscow</s2>
<s3>RUS</s3>
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<author><name sortKey="Zvonkov, B N" uniqKey="Zvonkov B">B. N. Zvonkov</name>
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<author><name sortKey="Dashevsky, Z" uniqKey="Dashevsky Z">Z. Dashevsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Materials Engineering, Ben-Gurion University of the Negev, P. O. Box 653</s1>
<s2>Beer-Sheva 84105</s2>
<s3>ISR</s3>
<sZ>5 aut.</sZ>
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<country>Israël</country>
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<author><name sortKey="Casian, V A" uniqKey="Casian V">V. A. Casian</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Materials Engineering, Ben-Gurion University of the Negev, P. O. Box 653</s1>
<s2>Beer-Sheva 84105</s2>
<s3>ISR</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Israël</country>
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<publicationStmt><idno type="inist">07-0365917</idno>
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<seriesStmt><idno type="ISSN">1386-9477</idno>
<title level="j" type="abbreviated">Physica ( E) low-dimens.  syst.  nanostrut.</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium arsenides</term>
<term>Illumination</term>
<term>Indium arsenides</term>
<term>Infrared radiation</term>
<term>Photoconductivity</term>
<term>Quantum dots</term>
<term>Shubnikov-de Haas effect</term>
<term>Temperature effects</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoconductivité</term>
<term>Eclairement</term>
<term>Rayonnement IR</term>
<term>Effet Shubnikov de Haas</term>
<term>Effet température</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Point quantique</term>
<term>InAs</term>
<term>GaAs</term>
<term>7363K</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Persistent lateral infra-red photoconductivity has been observed and investigated in InAs/GaAs layers with quantum dots (QD) in the temperature range 4.2</div>
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<fA06><s2>1</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer</s1>
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<fA11 i1="01" i2="1"><s1>KULBACHINSKII (V. A.)</s1>
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<fA11 i1="02" i2="1"><s1>KYTIN (V. G.)</s1>
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<fA14 i1="01"><s1>Low Temperature Physics Department, M. V. Lomonosov Moscow State University, GSP-2</s1>
<s2>119992 Moscow</s2>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA14 i1="02"><s1>Physicotechnical Research Institute, Lobachevskii State University</s1>
<s2>603600, Nizhnii-Novgorod</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Materials Engineering, Ben-Gurion University of the Negev, P. O. Box 653</s1>
<s2>Beer-Sheva 84105</s2>
<s3>ISR</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA20><s1>1-7</s1>
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<s1>© 2007 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>22 ref.</s0>
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<fA60><s1>P</s1>
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<fA61><s0>A</s0>
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<fC01 i1="01" l="ENG"><s0>Persistent lateral infra-red photoconductivity has been observed and investigated in InAs/GaAs layers with quantum dots (QD) in the temperature range 4.2</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C63K</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Photoconductivité</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Photoconductivity</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Eclairement</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Illumination</s0>
<s5>03</s5>
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<fC03 i1="03" i2="3" l="FRE"><s0>Rayonnement IR</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Infrared radiation</s0>
<s5>04</s5>
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<s5>06</s5>
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<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="06" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>16</s5>
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<fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>17</s5>
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<fC03 i1="08" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>17</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>53</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>7363K</s0>
<s4>INC</s4>
<s5>60</s5>
</fC03>
<fN21><s1>239</s1>
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</record>

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Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri